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Optics Letters

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  • Vol. 24, Iss. 22 — Nov. 15, 1999
  • pp: 1581–1583

Production and characterization of Ti:sapphire thin films grown by reactive laser ablation with elemental precursors

P. R. Willmott, P. Manoravi, J. R. Huber, T. Greber, Tracey A. Murray, and Keith Holliday  »View Author Affiliations


Optics Letters, Vol. 24, Issue 22, pp. 1581-1583 (1999)
http://dx.doi.org/10.1364/OL.24.001581


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Abstract

Crystalline Ti:sapphire (Ti:Al<sub>2</sub>O<sub>3</sub>) thin films were grown at low temperatures upon Al<sub>2</sub>O<sub>3</sub> (0001) substrates by reactive crossed-beam laser ablation at 248 nm by use of a liquid Ti–Al alloy target and O<sub>2</sub> . The films were investigated <i>ex situ</i> by x-ray diffraction, x-ray photoelectron spectroscopy, and Rutherford backscattering spectrometry. Low-temperature luminescence was identical to that for Ti<sup>3+</sup> ions in bulk samples of Al<sub>2</sub>O<sub>3</sub> .

© 1999 Optical Society of America

OCIS Codes
(140.3390) Lasers and laser optics : Laser materials processing
(230.7390) Optical devices : Waveguides, planar
(260.3800) Physical optics : Luminescence
(310.1860) Thin films : Deposition and fabrication
(310.6860) Thin films : Thin films, optical properties

Citation
P. R. Willmott, P. Manoravi, J. R. Huber, T. Greber, Tracey A. Murray, and Keith Holliday, "Production and characterization of Ti:sapphire thin films grown by reactive laser ablation with elemental precursors," Opt. Lett. 24, 1581-1583 (1999)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-24-22-1581


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References

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