Abstract

A microscopic fluorescence imaging system is used to detect optically active centers located inside a transparent dielectric crystal. Defect centers in the bulk of ${\mathrm{KH}}_2{\mathrm{PO}}_4$ crystals are imaged based on their near-infrared emission following photoexcitation. The spatial resolution of the system is $1 \mu \mathrm{m}$ in the image plane and $25 \mu \mathrm{m}$ in depth. The experimental results indicate the presence of a large number of optically active defect clusters in different ${\mathrm{KH}}_2{\mathrm{PO}}_4$ crystals, whereas the concentration of these clusters depends on the crystal sector and growth method.

© 1999 Optical Society of America

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