Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells
Optics Letters, Vol. 24, Issue 5, pp. 321-323 (1999)
http://dx.doi.org/10.1364/OL.24.000321
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Abstract
Semi-insulating InGaAs/GaAs multiple quantum wells are fabricated by metal-organic vapor-phase epitaxy and proton implantation. Two-wave mixing gain and four-wave mixing diffraction efficiency are measured at wavelengths of 0.91–0.94µm in the Franz–Keldysh geometry. We observe a large photorefractive effect caused by the excitonic electro-optic effect. The maximum diffraction efficiency reaches ~1.5×10-4 .
© 1999 Optical Society of America
[Optical Society of America ]
OCIS Codes
(160.5320) Materials : Photorefractive materials
(160.6000) Materials : Semiconductor materials
(190.5330) Nonlinear optics : Photorefractive optics
Citation
S. Iwamoto, H. Kageshima, T. Yuasa, M. Nishioka, T. Someya, Y. Arakawa, K. Fukutani, T. Shimura, and K. Kuroda, "Resonant photorefractive effect in InGaAs/GaAs multiple quantum wells," Opt. Lett. 24, 321-323 (1999)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-24-5-321
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