Time-dependent scattering of a standing surface plasmon by rapid ionization in a semiconductor
Optics Letters, Vol. 25, Issue 12, pp. 926-928 (2000)
http://dx.doi.org/10.1364/OL.25.000926
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Abstract
Scattering of a standing surface plasmon by rapid ionization in a semiconductor is investigated. We show that, for a standing plasmon, in contrast with a traveling plasmon, the scattering depends on the plasmon phase at the moment of ionization. By changing the moment of ionization, we can control the energy that is transferred into newly excited modes, which include a frequency-upshifted standing surface plasmon, transient outgoing radiation, and free-streaming currents with a static magnetic field in the semiconductor. The phenomena that are described open new possibilities for probing the dynamics of surface excitations in semiconductors on an ultrashort time scale.
© 2000 Optical Society of America
[Optical Society of America ]
OCIS Codes
(240.6680) Optics at surfaces : Surface plasmons
(260.2110) Physical optics : Electromagnetic optics
(320.7110) Ultrafast optics : Ultrafast nonlinear optics
(350.5400) Other areas of optics : Plasmas
Citation
Michael I. Bakunov, Alexey V. Maslov, and Sergey N. Zhukov, "Time-dependent scattering of a standing surface plasmon by rapid ionization in a semiconductor," Opt. Lett. 25, 926-928 (2000)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-25-12-926
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