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Photorefractive multiple quantum wells at 1064 nm

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Abstract

We have fabricated photorefractive InGaAs/GaAs multiple quantum wells that are sensitive at wavelengths near 1.06 μm for what is believed to be the first time. We have measured four-wave-mixing diffraction efficiency, using a Nd:YAG laser. A maximum diffraction efficiency of 7×10-4 and a cutoff grating period of 2 μm are obtained.

© 2001 Optical Society of America

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