Extremely broadband emission is obtained from semiconductor optical amplifiers–superluminescent diodes with nonidentical quantum wells made of InGaAsP/InP materials. The well sequence is experimentally shown to have a significant influence on the emission spectra. With the three In<sub>0.67</sub> Ga<sub>0.33</sub> As<sub>0.72</sub> P<sub>0.28</sub> quantum wells near the n -cladding layer and the two In<sub>0.53</sub> Ga<sub>0.47</sub> As quantum wells near the p -cladding layer, all bounded by In<sub>0.86</sub> Ga<sub>0.14</sub> As<sub>0.3</sub>P<sub>0.7</sub> barriers, the emission spectrum could cover from less than 1.3 to nearly 1.55 µm, and the FWHM could be near 300 nm.
© 2001 Optical Society of America
(060.4510) Fiber optics and optical communications : Optical communications
(160.3380) Materials : Laser materials
(160.6000) Materials : Semiconductor materials
(230.0250) Optical devices : Optoelectronics
(250.5980) Optoelectronics : Semiconductor optical amplifiers
Ching-Fuh Lin, Bing-Ruey Wu, Lih-Wen Laih, and Tien-Tsorng Shih, "Sequence influence of nonidentical InGaAsP quantum wells on broadband characteristics of semiconductor optical amplifiers--superluminescent diodes," Opt. Lett. 26, 1099-1101 (2001)