An enhancement of the infrared detection efficiency of Si photon-counting detectors by inclusion of SiGe absorbing layers has been demonstrated for what is believed to be the first time. An improvement of 30 times in detection efficiency at a wavelength of 1210 nm compared with that of an all-Si structure operated under identical conditions has been measured. The Si/Si<sub>0.7</sub>Ge<sub>0.3</sub> device is capable of room-temperature operation and has a response time of less than 300 ps.
© 2002 Optical Society of America
Alison Y. Loudon, Philip A. Hiskett, Gerald S. Buller, Roger T. Carline, Dave C. Herbert, W. Y. Leong, and John G. Rarity, "Enhancement of the infrared detection efficiency of silicon photon-counting avalanche photodiodes by use of silicon germanium absorbing layers," Opt. Lett. 27, 219-221 (2002)