Rib microwaveguides are demonstrated on silicon-on-insulator substrates with Si film thickness of either 380 or 200 nm and a width of 1μm . Corner mirrors that allow compact 90° turns between two perpendicular waveguides are characterized. Measured propagation losses are ~0.4 dB/cm and ~0.5 dB/cm for 380-nm and 200-nm Si film, respectively, and mirror losses are ~1 dB . This allows the development of applications such as optical interconnects in integrated circuits over propagation distances larger than several centimeters.
© 2003 Optical Society of America
S. Lardenois, D. Pascal, L. Vivien, E. Cassan, S. Laval, R. Orobtchouk, M. Heitzmann, N. Bouzaida, and L. Mollard, "Low-loss submicrometer silicon-on-insulator rib waveguides and corner mirrors," Opt. Lett. 28, 1150-1152 (2003)