Abstract
We present a new monolithic GaAs-based semiconductor saturable bsorber operating at . An epitaxially grown absorber mirror in a GaInNAs/GaAs material system was successfully used to mode lock an erbium-doped fiber laser. The GaInNAs material system possesses intriguing physical properties and provides great potential for lasers and nonlinear optical devices operating at the wavelength range.
© 2003 Optical Society of America
Full Article | PDF ArticleMore Like This
H. D. Sun, G. J. Valentine, R. Macaluso, S. Calvez, D. Burns, M. D. Dawson, T. Jouhti, and M. Pessa
Opt. Lett. 27(23) 2124-2126 (2002)
O. G. Okhotnikov, L. Gomes, N. Xiang, T. Jouhti, and A. B. Grudinin
Opt. Lett. 28(17) 1522-1524 (2003)
H. C. Lai, A. Li, K. W. Su, M. L. Ku, Y. F. Chen, and K. F. Huang
Opt. Lett. 30(5) 480-482 (2005)