4-ps passively mode-locked Nd:Gd0.5Y0.5VO4 laser with a semiconductor saturable-absorber mirror
Optics Letters, Vol. 29, Issue 23, pp. 2803-2805 (2004)
http://dx.doi.org/10.1364/OL.29.002803
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Abstract
We have demonstrated a passively mode-locked diode end-pumped all-solid-state laser, which is composed of a Nd:Gd>0.5Y0.5VO4 crystal and a folded cavity with a semiconductor saturable-absorber mirror grown by metal-organic chemical-vapor deposition. Stable cw mode locking with a 3.8-ps pulse duration at a repetition rate of 112 MHz was obtained. At 13.6 W of the incident pump power, a clean mode-locked fundamental-mode average output power of 3.9 W was achieved with an overall optical-to-optical efficiency of 29.0%, and the slope efficiency was 38.1%.
© 2004 Optical Society of America
OCIS Codes
(140.3380) Lasers and laser optics : Laser materials
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3530) Lasers and laser optics : Lasers, neodymium
(140.4050) Lasers and laser optics : Mode-locked lasers
(160.6000) Materials : Semiconductor materials
Citation
Jing-Liang He, Ya-Xian Fan, Juan Du, Yong-Gang Wang, Sheng Liu, Hui-Tian Wang, Lian-Han Zhang, and Yin Hang, "4-ps passively mode-locked Nd:Gd0.5Y0.5VO4 laser with a semiconductor saturable-absorber
mirror," Opt. Lett. 29, 2803-2805 (2004)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-29-23-2803
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