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Optics Letters

Optics Letters


  • Vol. 30, Iss. 14 — Jul. 15, 2005
  • pp: 1773–1775

Visible and near-infrared responsivity of femtosecond-laser microstructured silicon photodiodes

James E. Carey, Catherine H. Crouch, Mengyan Shen, and Eric Mazur  »View Author Affiliations

Optics Letters, Vol. 30, Issue 14, pp. 1773-1775 (2005)

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We investigated the current-voltage characteristics and responsivity of photodiodes fabricated with silicon that was microstructured by use of femtosecond-laser pulses in a sulfur-containing atmosphere. The photodiodes that we fabricated have a broad spectral response ranging from the visible to the near infrared (400-1600 nm). The responsivity depends on substrate doping, microstructuring fluence, and annealing temperature. We obtained room-temperature responsivities as high as 100 A/W at 1064 nm, 2 orders of magnitude higher than for standard silicon photodiodes. For wavelengths below the bandgap we obtained responsivities as high as 50 mA/W at 1330 nm and 35 mA/W at 1550 nm.

© 2005 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(040.6040) Detectors : Silicon
(140.3390) Lasers and laser optics : Laser materials processing
(160.1890) Materials : Detector materials

James E. Carey, Catherine H. Crouch, Mengyan Shen, and Eric Mazur, "Visible and near-infrared responsivity of femtosecond-laser microstructured silicon photodiodes," Opt. Lett. 30, 1773-1775 (2005)

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