Ultrafast integrated semiconductor optical modulator based on the plasma-dispersion effect
Optics Letters, Vol. 30, Issue 18, pp. 2403-2405 (2005)
http://dx.doi.org/10.1364/OL.30.002403
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Abstract
We demonstrate integrated semiconductor optical devices with ultrafast temporal responses based on the plasma-dispersion effect. The geometry of the devices removes the dependence of the modulation time on the free-carrier dynamics. We present the theoretical analysis of the performance of such devices. We show that a silicon-based device with a free-carrier lifetime of 1.4 ns can be modulated on a time scale of only 20 ps. The ultrafast operation is verified experimentally.
© 2005 Optical Society of America
OCIS Codes
(130.2790) Integrated optics : Guided waves
(130.3120) Integrated optics : Integrated optics devices
(130.4310) Integrated optics : Nonlinear
(130.5990) Integrated optics : Semiconductors
(190.4390) Nonlinear optics : Nonlinear optics, integrated optics
(190.7110) Nonlinear optics : Ultrafast nonlinear optics
Citation
Vilson R. Almeida, Qianfan Xu, and Michal Lipson, "Ultrafast integrated semiconductor optical modulator based on the plasma-dispersion effect," Opt. Lett. 30, 2403-2405 (2005)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-30-18-2403
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