OSA's Digital Library

Optics Letters

Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Anthony J. Campillo
  • Vol. 30, Iss. 20 — Oct. 15, 2005
  • pp: 2808–2810

Mode-locked laser diode with an ultrafast integrated uni-traveling carrier saturable absorber

R. Scollo, H.-J. Lohe, J. F. Holzman, F. Robin, H. Jäckel, D. Erni, W. Vogt, and E. Gini  »View Author Affiliations


Optics Letters, Vol. 30, Issue 20, pp. 2808-2810 (2005)
http://dx.doi.org/10.1364/OL.30.002808


View Full Text Article

Acrobat PDF (254 KB)





Browse Journals / Lookup Meetings

Browse by Journal and Year


   


Lookup Conference Papers

Close Browse Journals / Lookup Meetings

Article Tools

Share
Citations

Abstract

A novel two-section integrated mode-locked laser diode (MLLD) with a separate ultrafast uni-traveling carrier (UTC) saturable absorber section and semiconductor optical amplifier gain section is demonstrated. The UTC absorber is composed of a thin p-InGaAsP absorbing layer and an intrinsic InGaAsP collecting layer. By confining the photoexcitation process to the thin highly doped absorbing layer, the diffusion-limited hole extraction process is greatly enhanced. The investigated MLLD produces 600 fs uncompressed optical pulses at a 42 GHz repetition rate.

© 2005 Optical Society of America

OCIS Codes
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.7090) Lasers and laser optics : Ultrafast lasers

ToC Category:
Ultrafast Optics

Citation
R. Scollo, H.-J. Lohe, J. F. Holzman, F. Robin, H. Jäckel, D. Erni, W. Vogt, and E. Gini, "Mode-locked laser diode with an ultrafast integrated uni-traveling carrier saturable absorber," Opt. Lett. 30, 2808-2810 (2005)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-30-20-2808


Sort:  Author  |  Year  |  Journal  |  Reset

References

  1. K. R. Tamura and K. Sato, Opt. Lett. 27, 1268 (2002).
  2. T. Ishibashi, T. Furuta, H. Fushimi, S. Kodama, H. Ito, T. Nagatsuma, N. Shimizu, and Y. Miyamoto, IEICE Trans. Electron. E83-C, 938 (2000).
  3. K. Kurishima, H. Nakajima, T. Kobayashi, Y. Matsuoka, and T. Ishibashi, IEEE Trans. Electron Devices 41, 1319 (1994). [CrossRef]
  4. C. Xu, J. M. Roth, W. H. Knox, and K. Bergman, Electron. Lett. 38, 86 (2002).
  5. D. A. Yanson, M. W. Street, S. D. McDougall, I. G. Thayne, J. H. Marsh, and E. A. Avrutin, Appl. Phys. Lett. 78, 3571 (2001). [CrossRef]
  6. D. A. Yanson, M. W. Street, S. D. McDougall, I. G. Thayne, J. H. Marsh, and E. A. Avrutin, IEEE J. Quantum Electron. 38, 1 (2002). [CrossRef]
  7. R. Scollo, H.-J. Lohe, F. Robin, D. Erni, W. Vogt, E. Gini, and H. Jäckel, in Proceedings of the IEEE/LEOS Conference on Numerical Simulation of Semiconductor Optoelectronic Devices (IEEE, 2004), pp. 99-100.
  8. S. Arahira, Y. Matsui, and Y. Ogawa, IEEE J. Quantum Electron. 32, 1211 (1996). [CrossRef]

Cited By

Alert me when this paper is cited

OSA is able to provide readers links to articles that cite this paper by participating in CrossRef's Cited-By Linking service. CrossRef includes content from more than 3000 publishers and societies. In addition to listing OSA journal articles that cite this paper, citing articles from other participating publishers will also be listed.


« Previous Article

OSA is a member of CrossRef.

CrossCheck Deposited