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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Anthony J. Campillo
  • Vol. 31, Iss. 11 — Jun. 1, 2006
  • pp: 1714–1716

Nonlinear absorption and Raman gain in helium-ion-implanted silicon waveguides

Y. Liu and H. K. Tsang  »View Author Affiliations


Optics Letters, Vol. 31, Issue 11, pp. 1714-1716 (2006)
http://dx.doi.org/10.1364/OL.31.001714


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Abstract

We study whether helium ion implantation can reduce the carrier lifetime and thus reduce the density of two-photon-absorption-generated free carriers. Our experiments and theoretical model show that helium ion implantation into silicon waveguides can successfully reduce the free-carrier losses and allow net gain to be attained by cw-pumped stimulated Raman scattering without requiring reverse bias to remove the photogenerated free carriers.

© 2006 Optical Society of America

OCIS Codes
(190.4390) Nonlinear optics : Nonlinear optics, integrated optics
(230.7390) Optical devices : Waveguides, planar
(290.5910) Scattering : Scattering, stimulated Raman

ToC Category:
Optical Devices

History
Original Manuscript: January 13, 2006
Manuscript Accepted: February 17, 2006

Citation
Y. Liu and H. K. Tsang, "Nonlinear absorption and Raman gain in helium-ion-implanted silicon waveguides," Opt. Lett. 31, 1714-1716 (2006)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-31-11-1714


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