Nonlinear absorption and Raman gain in helium-ion-implanted silicon waveguides
Optics Letters, Vol. 31, Issue 11, pp. 1714-1716 (2006)
http://dx.doi.org/10.1364/OL.31.001714
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Abstract
We study whether helium ion implantation can reduce the carrier lifetime and thus reduce the density of two-photon-absorption-generated free carriers. Our experiments and theoretical model show that helium ion implantation into silicon waveguides can successfully reduce the free-carrier losses and allow net gain to be attained by cw-pumped stimulated Raman scattering without requiring reverse bias to remove the photogenerated free carriers.
© 2006 Optical Society of America
OCIS Codes
(190.4390) Nonlinear optics : Nonlinear optics, integrated optics
(230.7390) Optical devices : Waveguides, planar
(290.5910) Scattering : Scattering, stimulated Raman
ToC Category:
Optical Devices
History
Original Manuscript: January 13, 2006
Manuscript Accepted: February 17, 2006
Citation
Y. Liu and H. K. Tsang, "Nonlinear absorption and Raman gain in helium-ion-implanted silicon waveguides," Opt. Lett. 31, 1714-1716 (2006)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-31-11-1714
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