Fabrication and laser operation of proton-implanted Ti:sapphire buried channel waveguides is reported for the first time to our knowledge. Without any postimplantation annealing of the structures, continuous laser operation near $780\mathrm{nm}$ was demonstrated at room temperature at an absorbed pump power threshold of $230\mathrm{mW}$ . Single-transverse-mode laser emission was observed with measured beam propagation factors $M_x^2$ and $M_y^2$ of 1.5 and 1.2, respectively. An output power of $12.4\mathrm{mW}$ for $1\mathrm{W}$ pump power was obtained with an output coupler of 4.6% transmission at the signal wavelength. Higher output powers were measured in waveguides with larger cross sections exhibiting multimode laser emission.