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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Anthony J. Campillo
  • Vol. 32, Iss. 10 — May. 15, 2007
  • pp: 1335–1337

n-Type Ga As Al Ga As heterostructure detector with a 3.2 THz threshold frequency

Aruna Weerasekara, Mohamad Rinzan, Steven Matsik, A. G.Unil Perera, Margaret Buchanan, Hui Chun Liu, Greg von Winckel, Andreas Stintz, and Sanjay Krishna  »View Author Affiliations


Optics Letters, Vol. 32, Issue 10, pp. 1335-1337 (2007)
http://dx.doi.org/10.1364/OL.32.001335


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Abstract

Terahertz detection using the free-carrier absorption requires a small internal work function of the order of a few millielectron volts. A threshold frequency of 3.2 THz ( 93 μ m or 13 meV work function) is demonstrated by using a 1 × 10 18 cm 3 Si-doped GaAs emitter and an undoped Al 0.04 Ga 0.96 As barrier structure. The peak responsivity of 6.5 A W , detectivity of 5.5 × 10 8 Jones, and quantum efficiency of 19% were obtained at 7.1 THz under a bias field of 0.7 kV cm at 6 K , while the detector spectral response range spans from 3.2 to 30 THz .

© 2007 Optical Society of America

OCIS Codes
(040.5160) Detectors : Photodetectors
(300.6270) Spectroscopy : Spectroscopy, far infrared
(310.6860) Thin films : Thin films, optical properties

ToC Category:
Spectroscopy

History
Original Manuscript: December 1, 2006
Revised Manuscript: February 5, 2007
Manuscript Accepted: February 13, 2007
Published: April 17, 2007

Citation
Aruna Weerasekara, Mohamad Rinzan, Steven Matsik, A. G. Perera, Margaret Buchanan, Hui Chun Liu, Greg von Winckel, Andreas Stintz, and Sanjay Krishna, "n-Type GaAs/AlGaAs heterostructure detector with a 3.2 THz threshold frequency," Opt. Lett. 32, 1335-1337 (2007)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-32-10-1335


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