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Optics Letters

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  • Editor: Anthony J. Campillo
  • Vol. 32, Iss. 2 — Jan. 15, 2007
  • pp: 136–138

Gigahertz modulation of GaAs-based bipolar cascade vertical cavity surface-emitting lasers

W. J. Siskaninetz, J. E. Ehret, J. D. Albrecht, R. G. Bedford, T. R. Nelson, Jr., and J. A. Lott  »View Author Affiliations


Optics Letters, Vol. 32, Issue 2, pp. 136-138 (2007)
http://dx.doi.org/10.1364/OL.32.000136


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Abstract

The high-frequency modulation characteristics of GaAs-based bipolar cascade vertical cavity surface-emitting lasers operating at 980 nm with GaAs tunnel junctions and p-doped Al 0.98 Ga 0.02 As oxide apertures have been measured. We achieve 3 dB laser output modulations of 6.5 GHz for two-stage and 9.4 GHz for three-stage devices in response to small-signal current injection at an operating temperature of 50 ° C .

© 2006 Optical Society of America

OCIS Codes
(130.0250) Integrated optics : Optoelectronics
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.6000) Materials : Semiconductor materials
(250.7260) Optoelectronics : Vertical cavity surface emitting lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: August 11, 2006
Manuscript Accepted: October 18, 2006
Published: December 23, 2006

Citation
W. J. Siskaninetz, J. E. Ehret, J. D. Albrecht, R. G. Bedford, T. R. Nelson, Jr., and J. A. Lott, "Gigahertz modulation of GaAs-based bipolar cascade vertical cavity surface-emitting lasers," Opt. Lett. 32, 136-138 (2007)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-32-2-136


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