We obtained high-quality lowest-loss-mode lasing in quasi-stadium laser diodes having unstable resonators that consisted of two curved end mirrors and two straight sidewall mirrors. The laser diodes were fabricated by applying a reactive ion etching technique to a metal-organic chemical-vapor deposition-grown graded-index separate-confinement heterostructure single-quantum-well GaAs/AlGaAs structure. The electrode contact area of the laser diodes was formed along unstable periodic orbits, along which the optical beams are localized. Highly directional fan-out beams corresponding to the numerically obtained lowest loss mode were emitted from the end mirrors under CW operation at room temperature.
© 2007 Optical Society of America
Lasers and Laser Optics
Original Manuscript: August 3, 2007
Manuscript Accepted: October 24, 2007
Published: November 20, 2007
Takehiro Fukushima, Tomoko Tanaka, and Takahisa Harayama, "High-quality lowest-loss-mode lasing in GaAs quasi-stadium laser diodes having unstable resonators," Opt. Lett. 32, 3397-3399 (2007)