The first demonstration, to our knowledge, of the creation of ultrabroadband superluminescent light-emitting diodes using multiple quantum-dot layer structure by rapid thermal-annealing process is reported. The device exhibits a $3\mathrm{dB}$ emission bandwidth of $146\mathrm{nm}$ centered at $984\mathrm{nm}$ with cw output power as high as $15\mathrm{mW}$ at room temperature corresponding to an extremely small coherence length of $6.6\mathrm{\mu }\mathrm{m}$ .

© 2008 Optical Society of America

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