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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 33, Iss. 19 — Oct. 1, 2008
  • pp: 2188–2190

High-power laser diodes emitting light above 1100 nm with a small vertical divergence angle of 13°

Agnieszka Pietrzak, Hans Wenzel, Götz Erbert, and Günther Tränkle  »View Author Affiliations


Optics Letters, Vol. 33, Issue 19, pp. 2188-2190 (2008)
http://dx.doi.org/10.1364/OL.33.002188


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Abstract

Laser diodes with highly strained InGaAs quantum wells, emitting at 1130 nm , embedded in a GaAs waveguide were investigated. This Letter reviews the design of the vertical structure for enclosing high output power in angles smaller than 18°. Example designs were processed to 200 μ m stripe-width lasers with an 8 - mm - l o n g optical cavity. When these are mounted on C mounts, they give an output power of 38 W under quasi-cw operation from a single emitter.

© 2008 Optical Society of America

OCIS Codes
(140.2020) Lasers and laser optics : Diode lasers
(140.5960) Lasers and laser optics : Semiconductor lasers

ToC Category:
Lasers and Laser Optics

History
Original Manuscript: June 26, 2008
Revised Manuscript: August 8, 2008
Manuscript Accepted: August 22, 2008
Published: September 24, 2008

Citation
Agnieszka Pietrzak, Hans Wenzel, Götz Erbert, and Günther Tränkle, "High-power laser diodes emitting light above 1100 nm with a small vertical divergence angle of 13°," Opt. Lett. 33, 2188-2190 (2008)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-33-19-2188


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References

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