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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 33, Iss. 2 — Jan. 15, 2008
  • pp: 201–203

High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 μ m

J.-M. Hopkins, N. Hempler, B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, J. Wagner, and D. Burns  »View Author Affiliations

Optics Letters, Vol. 33, Issue 2, pp. 201-203 (2008)

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We report a high-power (AlGaIn)(AsSb) semiconductor disk laser emitting around 2 μ m . With a diamond heat spreader used for thermal management, a maximum output power of just over 5 W and slope efficiencies of over 25% were demonstrated. The output wavelength was tunable over an 80 nm range centered at 1.98 μ m . The beam propagation parameter ( M 2 ) was measured to be in the range of 1.1 to 1.4 for output powers up to 3 W .

© 2008 Optical Society of America

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.3580) Lasers and laser optics : Lasers, solid-state
(250.7260) Optoelectronics : Vertical cavity surface emitting lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: October 26, 2007
Manuscript Accepted: November 26, 2007
Published: January 14, 2008

J.-M. Hopkins, N. Hempler, B. Rösener, N. Schulz, M. Rattunde, C. Manz, K. Köhler, J. Wagner, and D. Burns, "High-power, (AlGaIn)(AsSb) semiconductor disk laser at 2.0 μm," Opt. Lett. 33, 201-203 (2008)

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