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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 33, Iss. 3 — Feb. 1, 2008
  • pp: 225–227

Passively mode-locked Nd : Lu V O 4 laser with a GaAs wafer

Haohai Yu, Huaijin Zhang, Zhengping Wang, Jiyang Wang, Yonggui Yu, Minhua Jiang, Dingyuan Tang, Guoqiang Xie, and Hang Luo  »View Author Affiliations

Optics Letters, Vol. 33, Issue 3, pp. 225-227 (2008)

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We report on the passive mode locking of a diode-pumped Nd : Lu V O 4 laser with a GaAs wafer as output coupler. Using the interference modulation effect of the GaAs wafer, high-power continuous-wave mode locking with a pulse width of about 7.1 ps and an average output power of 3.11 W was achieved. Our result shows that Nd : Lu V O 4 could be an excellent gain medium for diode-pumped high-power mode-locked lasers.

© 2008 Optical Society of America

OCIS Codes
(140.3380) Lasers and laser optics : Laser materials
(140.3480) Lasers and laser optics : Lasers, diode-pumped
(140.3530) Lasers and laser optics : Lasers, neodymium
(140.4050) Lasers and laser optics : Mode-locked lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: November 26, 2007
Revised Manuscript: January 4, 2008
Manuscript Accepted: January 4, 2008
Published: January 22, 2008

Haohai Yu, Huaijin Zhang, Zhengping Wang, Jiyang Wang, Yonggui Yu, Minhua Jiang, Dingyuan Tang, Guoqiang Xie, and Hang Luo, "Passively mode-locked Nd:LuVO4 laser with a GaAs wafer," Opt. Lett. 33, 225-227 (2008)

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