An infrared (IR) polarizer with tungsten silicide (WSi) wire grid was fabricated by two-beam interference exposure and reactive ion etching. To enhance TM transmittance, silicon monoxide was deposited between the WSi wire grid ( $400\mathrm{nm}$ period) and a Si substrate. The transmittance was over 80% in the $4–5\mu \mathrm{m}$ wavelength range. The ratio of TM and TE transmittances was over 100 $\left(20\mathrm{dB}\right)$ in the $2.5–6\mu \mathrm{m}$ wavelength range. The fabricated polarizer has higher durability and bettter compatibility with microfabrication processes compared with conventional IR polarizers.

© 2008 Optical Society of America

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