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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 33, Iss. 8 — Apr. 15, 2008
  • pp: 815–817

Influence of doping rate in Er 3 + : ZnO films on emission characteristics

L. Douglas, R. Mundle, R. Konda, C. E. Bonner, A. K. Pradhan, D. R. Sahu, and J-L. Huang  »View Author Affiliations

Optics Letters, Vol. 33, Issue 8, pp. 815-817 (2008)

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High-quality Er 3 + : ZnO films were grown by the pulsed-laser deposition technique for 0.5 and 2 wt. % Er doping. Two peaks were observed at approximately 1.54 μ m in the photoluminescence spectra of samples with 2 wt. % doping contrary to only one peak in the 0.5 wt. % doped sample. Both peaks were found to be strongly temperature dependent. The microscopic studies clearly illustrate that the appearance of the additional peak is attributed to the environment of Er 3 + ions in the form of ErO 6 clusters, which are optically active centers in the ZnO matrix. These results are very important for designing waveguides for telecommunications.

© 2008 Optical Society of America

OCIS Codes
(160.0160) Materials : Materials
(160.4760) Materials : Optical properties
(160.6000) Materials : Semiconductor materials
(310.0310) Thin films : Thin films
(310.6860) Thin films : Thin films, optical properties

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Original Manuscript: January 29, 2008
Revised Manuscript: February 29, 2008
Manuscript Accepted: March 7, 2008
Published: April 11, 2008

L. Douglas, R. Mundle, R. Konda, C. E. Bonner, A. K. Pradhan, D. R. Sahu, and J-L. Huang, "Influence of doping rate in Er3+:ZnO films on emission characteristics," Opt. Lett. 33, 815-817 (2008)

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