Abstract

We observe critical coupling to surface phonon-polaritons in silicon carbide by attenuated total reflection of mid-IR radiation. Reflectance measurements demonstrate critical coupling by a double scan of wavelength and incidence angle. Critical coupling occurs when prism coupling loss is equal to losses in silicon carbide and the substrate, resulting in maximal electric field enhancement.

© 2009 Optical Society of America

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History
Original Manuscript: June 2, 2009
Manuscript Accepted: July 17, 2009
Published: August 28, 2009

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Author Affiliations

Davy Carole, Gabriel Ferro

Université Claude Bernard Lyon 1

Burton Neuner III, Dmitriy Korobkin, Chris Fietz, Gennady Shvets

University of Texas at Austin

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