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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 34, Iss. 20 — Oct. 15, 2009
  • pp: 3068–3070

Toward a 1550 nm InGaAs photoconductive switch for terahertz generation

Kimani K. Williams, Z. D. Taylor, J. Y. Suen, Hong Lu, R. S. Singh, A. C. Gossard, and E. R. Brown  »View Author Affiliations


Optics Letters, Vol. 34, Issue 20, pp. 3068-3070 (2009)
http://dx.doi.org/10.1364/OL.34.003068


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Abstract

We report a terahertz (THz) photoconductive switch made from a composite of metal ErAs nanoparticles embedded in In 0.53 Ga 0.47 As and coupled to a square spiral antenna. The THz output power was measured in a 77 K cryostat by using a standard hyperhemisphere-lens package, a Golay cell outside the cryostat, and a quasi-optical filter bank for spot frequency spectral measurements. Results indicate an average output power of ∼12 μW at 22 V bias using 140 mW of optical pump power from a subpicosecond fiber mode-locked laser. In addition, the THz spectra displayed invariance to bias voltage despite operating near impact ionization.

© 2009 Optical Society of America

OCIS Codes
(160.2100) Materials : Electro-optical materials
(160.5140) Materials : Photoconductive materials
(260.5150) Physical optics : Photoconductivity

ToC Category:
Materials

History
Original Manuscript: June 16, 2009
Revised Manuscript: September 2, 2009
Manuscript Accepted: September 6, 2009
Published: October 5, 2009

Citation
Kimani K. Williams, Z. D. Taylor, J. Y. Suen, Hong Lu, R. S. Singh, A. C. Gossard, and E. R. Brown, "Toward a 1550 nm InGaAs photoconductive switch for terahertz generation," Opt. Lett. 34, 3068-3070 (2009)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-34-20-3068


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References

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