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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 34, Iss. 20 — Oct. 15, 2009
  • pp: 3139–3141

Power-scalable 1.57 μ m mode-locked semiconductor disk laser using wafer fusion

Esa J. Saarinen, Janne Puustinen, Alexei Sirbu, Alexandru Mereuta, Andrei Caliman, Eli Kapon, and Oleg G. Okhotnikov  »View Author Affiliations

Optics Letters, Vol. 34, Issue 20, pp. 3139-3141 (2009)

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We report the first (to our knowledge) wafer-fused high-power passively mode-locked semiconductor disk laser operating at 1.57 μ m wavelength. An InP-based active medium was fused with Ga As Al Ga As distributed Bragg reflector on a 2  inch wafer level, resulting in an integrated monolithic gain mirror. An intracavity wedged diamond heat-spreader capillary bonded to the gain chip provides efficient heat removal from the gain structure without disturbing the spectrum of the mode-locked laser. The laser produces over 0.6 W of average output power at 15 ° C with 16 ps pulse width. The total output power accounting for all output beams emerging from the cavity was 0.86 W . The results reveal an essential advantage of wafer fusion processing of disparate materials over monolithically grown InP-based gain structures and demonstrate the high potential of this technique for power scaling of long-wavelength semiconductor disk lasers.

© 2009 Optical Society of America

OCIS Codes
(140.3070) Lasers and laser optics : Infrared and far-infrared lasers
(140.4050) Lasers and laser optics : Mode-locked lasers
(140.5960) Lasers and laser optics : Semiconductor lasers
(140.7270) Lasers and laser optics : Vertical emitting lasers

ToC Category:
Lasers and Laser Optics

Original Manuscript: April 10, 2009
Manuscript Accepted: August 30, 2009
Published: October 7, 2009

Esa J. Saarinen, Janne Puustinen, Alexei Sirbu, Alexandru Mereuta, Andrei Caliman, Eli Kapon, and Oleg G. Okhotnikov, "Power-scalable 1.57 μm mode-locked semiconductor disk laser using wafer fusion," Opt. Lett. 34, 3139-3141 (2009)

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