Epitaxial films of neodymium-doped sapphire have been grown by molecular beam epitaxy on R-, A-, and M-plane sapphire substrates. The emission spectrum features sharp lines consistent with single-site doping of the ${\mathrm{Nd}}^{3+}$ ion into the host crystal. This material is believed to be a nonequilibrium phase, inaccessible by conventional high-temperature growth methods. Neodymium-doped sapphire has a promising lasing line at $1096\mathrm{nm}$ with an emission cross section of $11.9\times {10}^{-19}{\mathrm{cm}}^2$ , similar to the $1064\mathrm{nm}$ line of $\mathrm{Nd}:\mathrm{Y}\mathrm{V}{\mathrm{O}}_4$ .