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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 34, Iss. 3 — Feb. 1, 2009
  • pp: 328–330

Lasing and optical gain around 500 nm from optically pumped lasers grown on c-plane GaN substrates

Dmitry S. Sizov, Rajaram Bhat, Jerome Napierala, Jingqun Xi, Donald E. Allen, Chad S. Gallinat, and Chung-En Zah  »View Author Affiliations

Optics Letters, Vol. 34, Issue 3, pp. 328-330 (2009)

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Using the variable stripe length method we demonstrated positive net optical gain around 500 nm for an optically pumped laser with In Ga N Ga N multiple quantum wells grown on c-plane freestanding GaN substrates. We found that owing to low optical gain, reducing optical losses is crucial to increasing lasing wavelength. We demonstrated lasing at 502 nm by using a 3 - mm -long cavity with cleaved facets.

© 2009 Optical Society of America

OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(300.6360) Spectroscopy : Spectroscopy, laser
(300.6470) Spectroscopy : Spectroscopy, semiconductors
(300.6550) Spectroscopy : Spectroscopy, visible

ToC Category:
Lasers and Laser Optics

Original Manuscript: September 15, 2008
Revised Manuscript: November 21, 2008
Manuscript Accepted: November 22, 2008
Published: January 27, 2009

Dmitry S. Sizov, Rajaram Bhat, Jerome Napierala, Jingqun Xi, Donald E. Allen, Chad S. Gallinat, and Chung-En Zah, "Lasing and optical gain around 500 nm from optically pumped lasers grown on c-plane GaN substrates," Opt. Lett. 34, 328-330 (2009)

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