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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 35, Iss. 11 — Jun. 1, 2010
  • pp: 1743–1745

Near-infrared photoluminescence and Raman characterization of bismuth-embedded sodalite nanocrystals

Hong-Tao Sun, Minoru Fujii, Yoshio Sakka, Zhenhua Bai, Naoto Shirahata, Liyan Zhang, Yuji Miwa, and Hong Gao  »View Author Affiliations

Optics Letters, Vol. 35, Issue 11, pp. 1743-1745 (2010)

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Ultrabroadband near-IR (NIR) emission has been realized in bismuth-embedded sodalite nanocrystals. Steady-state and time-resolved photoluminescence and Raman results suggest that Bi + active centers contribute to the NIR emission. This study demonstrates that sodalite nanocrystals can serve as excellent hosts for bismuth NIR active centers, thus paving the way for their wide applications in nanophotonics.

© 2010 Optical Society of America

OCIS Codes
(160.4670) Materials : Optical materials
(160.4760) Materials : Optical properties
(300.2140) Spectroscopy : Emission

ToC Category:

Original Manuscript: February 24, 2010
Revised Manuscript: April 20, 2010
Manuscript Accepted: April 23, 2010
Published: May 17, 2010

Hong-Tao Sun, Minoru Fujii, Yoshio Sakka, Zhenhua Bai, Naoto Shirahata, Liyan Zhang, Yuji Miwa, and Hong Gao, "Near-infrared photoluminescence and Raman characterization of bismuth-embedded sodalite nanocrystals," Opt. Lett. 35, 1743-1745 (2010)

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