We show that sensitized superbroadband near-IR (NIR) emission in bismuth glass/Si nanocrystal superlattices can be realized. Photoluminescence is enhanced by 1 order of magnitude in this structure. We observed that the excitation wavelength dependence of the NIR emission does not show any distinct structure corresponding to the direct transition of bismuth IR-active centers. Our results suggest that the enhanced emission might result from the energy transfer from Si nanocrystals to IR-active bismuth. This structure may find broad applications for broadband amplifiers and broadly tunable laser sources.
© 2010 Optical Society of America
Original Manuscript: February 9, 2010
Revised Manuscript: May 23, 2010
Manuscript Accepted: May 24, 2010
Published: June 24, 2010
Hong-Tao Sun, Fumiaki Shimaoka, Yuji Miwa, Jian Ruan, Minoru Fujii, Jianrong Qiu, and Shinji Hayashi, "Sensitized superbroadband near-IR emission in bismuth glass/Si nanocrystal superlattices," Opt. Lett. 35, 2215-2217 (2010)