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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 35, Iss. 19 — Oct. 1, 2010
  • pp: 3285–3287

Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer

Yen-Kuang Kuo, Jih-Yuan Chang, and Miao-Chan Tsai  »View Author Affiliations

Optics Letters, Vol. 35, Issue 19, pp. 3285-3287 (2010)

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Some specific designs on the electron blocking layer (EBL) of blue InGaN LEDs are investigated numerically in order to improve the hole injection efficiency without losing the blocking capability of electrons. Simulation results show that polarization-induced downward band bending is mitigated in these redesigned EBLs and, hence, the hole injection efficiency increases markedly. The optical performance and efficiency droop are also improved, especially under the situation of high current injection.

© 2010 Optical Society of America

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

Original Manuscript: July 14, 2010
Revised Manuscript: August 27, 2010
Manuscript Accepted: August 29, 2010
Published: September 29, 2010

Yen-Kuang Kuo, Jih-Yuan Chang, and Miao-Chan Tsai, "Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer," Opt. Lett. 35, 3285-3287 (2010)

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