Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer
Optics Letters, Vol. 35, Issue 19, pp. 3285-3287 (2010)
http://dx.doi.org/10.1364/OL.35.003285
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Abstract
Some specific designs on the electron blocking layer (EBL) of blue InGaN LEDs are investigated numerically in order to improve the hole injection efficiency without losing the blocking capability of electrons. Simulation results show that polarization-induced downward band bending is mitigated in these redesigned EBLs and, hence, the hole injection efficiency increases markedly. The optical performance and efficiency droop are also improved, especially under the situation of high current injection.
© 2010 Optical Society of America
OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
ToC Category:
Optical Devices
History
Original Manuscript: July 14, 2010
Revised Manuscript: August 27, 2010
Manuscript Accepted: August 29, 2010
Published: September 29, 2010
Citation
Yen-Kuang Kuo, Jih-Yuan Chang, and Miao-Chan Tsai, "Enhancement in hole-injection efficiency of blue InGaN light-emitting diodes from reduced polarization by some specific designs for the electron blocking layer," Opt. Lett. 35, 3285-3287 (2010)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-35-19-3285
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