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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 35, Iss. 20 — Oct. 15, 2010
  • pp: 3336–3338

High spatial resolution ellipsometer for characterization of epitaxial graphene

Peter E. Gaskell, Helgi S. Skulason, Wlodek Strupinski, and Thomas Szkopek  »View Author Affiliations

Optics Letters, Vol. 35, Issue 20, pp. 3336-3338 (2010)

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An ellipsometer with 3 μm × 5 μm spot size constructed with a single focusing and imaging element is used to measure the layer number of exfoliated graphene on glass and expitaxial graphene on SiC. Ellipsometric sensitivity to graphene layer number increases with decreasing layer number and decreasing substrate refractive index. Single-atomic-layer sensitivity has been achieved. High spatial resolution imaging and ellipsometry is useful for rapid characterization of epitaxially grown graphene films.

© 2010 Optical Society of America

OCIS Codes
(120.2130) Instrumentation, measurement, and metrology : Ellipsometry and polarimetry
(160.4236) Materials : Nanomaterials

ToC Category:

Original Manuscript: July 8, 2010
Revised Manuscript: September 8, 2010
Manuscript Accepted: September 10, 2010
Published: October 7, 2010

Peter E. Gaskell, Helgi S. Skulason, Wlodek Strupinski, and Thomas Szkopek, "High spatial resolution ellipsometer for characterization of epitaxial graphene," Opt. Lett. 35, 3336-3338 (2010)

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