Epitaxial Nd-doped α-(Al1−xGax)2O3 films on sapphire for solid-state waveguide lasers
Optics Letters, Vol. 35, Issue 22, pp. 3793-3795 (2010)
http://dx.doi.org/10.1364/OL.35.003793
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Abstract
Single-crystal aluminum–gallium oxide films have been grown by molecular beam epitaxy in the corundum phase. Films of the
© 2010 Optical Society of America
OCIS Codes
(160.3380) Materials : Laser materials
(160.5690) Materials : Rare-earth-doped materials
(310.0310) Thin films : Thin films
ToC Category:
Materials
History
Original Manuscript: September 14, 2010
Manuscript Accepted: October 5, 2010
Published: November 9, 2010
Citation
Raveen Kumaran, Thomas Tiedje, Scott E. Webster, Shawn Penson, and Wei Li, "Epitaxial Nd-doped α-(Al1−xGax)2O3 films on sapphire for solid-state waveguide lasers," Opt. Lett. 35, 3793-3795 (2010)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-35-22-3793
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