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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 35, Iss. 5 — Mar. 1, 2010
  • pp: 679–681

Ge-on-Si laser operating at room temperature

Jifeng Liu, Xiaochen Sun, Rodolfo Camacho-Aguilera, Lionel C. Kimerling, and Jurgen Michel  »View Author Affiliations

Optics Letters, Vol. 35, Issue 5, pp. 679-681 (2010)

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Monolithic lasers on Si are ideal for high-volume and large-scale electronic–photonic integration. Ge is an interesting candidate owing to its pseudodirect gap properties and compatibility with Si complementary metal oxide semiconductor technology. Recently we have demonstrated room-temperature photoluminescence, electroluminescence, and optical gain from the direct gap transition of band-engineered Ge-on-Si using tensile strain and n-type doping. Here we report what we believe to be the first experimental observation of lasing from the direct gap transition of Ge-on-Si at room temperature using an edge-emitting waveguide device. The emission exhibited a gain spectrum of 1590 1610 nm , line narrowing and polarization evolution from a mixed TE/TM to predominantly TE with increasing gain, and a clear threshold behavior.

© 2010 Optical Society of America

OCIS Codes
(130.5990) Integrated optics : Semiconductors
(160.3380) Materials : Laser materials
(250.5960) Optoelectronics : Semiconductor lasers

ToC Category:
Integrated Optics

Original Manuscript: December 18, 2009
Revised Manuscript: January 20, 2010
Manuscript Accepted: January 21, 2010
Published: February 24, 2010

Jifeng Liu, Xiaochen Sun, Rodolfo Camacho-Aguilera, Lionel C. Kimerling, and Jurgen Michel, "Ge-on-Si laser operating at room temperature," Opt. Lett. 35, 679-681 (2010)

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