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Optics Letters

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  • Editor: Alan E. Willner
  • Vol. 35, Iss. 9 — May. 1, 2010
  • pp: 1368–1370

Advantages of blue InGaN light-emitting diodes with AlGaN barriers

Jih-Yuan Chang, Miao-Chan Tsai, and Yen-Kuang Kuo  »View Author Affiliations


Optics Letters, Vol. 35, Issue 9, pp. 1368-1370 (2010)
http://dx.doi.org/10.1364/OL.35.001368


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Abstract

The advantages of blue InGaN light-emitting diodes (LEDs) with AlGaN barriers are studied numerically. The performance curves, energy band diagrams, electrostatic fields, and carrier concentrations are investigated. The simulation results show that the In Ga N Al Ga N LED has better performance than its conventional In Ga N Ga N counterpart owing to the increase of hole injection and the enhancement of electron confinement. The simulation results also suggest that the efficiency droop is markedly improved when the traditional GaN barriers are replaced by AlGaN barriers.

© 2010 Optical Society of America

OCIS Codes
(230.0250) Optical devices : Optoelectronics
(230.3670) Optical devices : Light-emitting diodes
(230.5590) Optical devices : Quantum-well, -wire and -dot devices

ToC Category:
Optical Devices

History
Original Manuscript: March 1, 2010
Revised Manuscript: March 24, 2010
Manuscript Accepted: March 25, 2010
Published: April 23, 2010

Citation
Jih-Yuan Chang, Miao-Chan Tsai, and Yen-Kuang Kuo, "Advantages of blue InGaN light-emitting diodes with AlGaN barriers," Opt. Lett. 35, 1368-1370 (2010)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-35-9-1368


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