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Blue–green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures |
Optics Letters, Vol. 36, Issue 14, pp. 2617-2619 (2011)
http://dx.doi.org/10.1364/OL.36.002617
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Abstract
Blue–green to near-IR switching electroluminescence (EL) has been achieved in a metal-oxide-semiconductor light emitting device, where the dielectric has been replaced by a Si-rich silicon oxide/nitride bilayer structure. To form Si nanostructures, the layers were implanted with Si ions at high energy, resulting in a Si excess of 19%, and subsequently annealed at
© 2011 Optical Society of America
OCIS Codes
(230.2090) Optical devices : Electro-optical devices
(230.6080) Optical devices : Sources
(250.0250) Optoelectronics : Optoelectronics
(260.3800) Physical optics : Luminescence
ToC Category:
Optoelectronics
History
Original Manuscript: March 2, 2011
Revised Manuscript: May 27, 2011
Manuscript Accepted: June 14, 2011
Published: July 11, 2011
Citation
Y. Berencén, O. Jambois, J. M. Ramírez, J. M. Rebled, S. Estradé, F. Peiró, C. Domínguez, J. A. Rodríguez, and B. Garrido, "Blue–green to near-IR switching electroluminescence from Si-rich silicon oxide/nitride bilayer structures," Opt. Lett. 36, 2617-2619 (2011)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-36-14-2617
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