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InP-based deep-ridge NPN transistor laser |
Optics Letters, Vol. 36, Issue 16, pp. 3206-3208 (2011)
http://dx.doi.org/10.1364/OL.36.003206
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Abstract
We report an InP-based deep-ridge NPN transistor laser (TL,
© 2011 Optical Society of America
OCIS Codes
(140.5960) Lasers and laser optics : Semiconductor lasers
(160.6000) Materials : Semiconductor materials
(250.5960) Optoelectronics : Semiconductor lasers
(250.5590) Optoelectronics : Quantum-well, -wire and -dot devices
ToC Category:
Optoelectronics
History
Original Manuscript: June 8, 2011
Manuscript Accepted: July 6, 2011
Published: August 12, 2011
Citation
S. Liang, D. H. Kong, H. L. Zhu, L. J. Zhao, J. Q. Pan, and W. Wang, "InP-based deep-ridge NPN transistor laser," Opt. Lett. 36, 3206-3208 (2011)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-36-16-3206
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