Abstract
We demonstrate a method for the efficient modulation of optical wavelengths around in silicon wave guides. The amplitude of a propagating signal is mediated via control of the charge state of indium centers, rather than using free-carriers alone as in the plasma-dispersion effect. A switch formed of an integrated junction in an indium-doped silicon on insulator (SOI) waveguide provides ‘normally-off’ silicon absorption of greater than at zero bias. This loss is decreased to with application of a applied reverse bias, with a power consumption of less than .
© 2011 Optical Society of America
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