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Optics Letters

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  • Vol. 36, Iss. 8 — Apr. 15, 2011
  • pp: 1344–1346

High Q light-emitting Si-rich Si 3 N 4 microdisks

Federico Ferrarese Lupi, Daniel Navarro-Urrios, Josep Monserrat, Carlos Dominguez, Paolo Pellegrino, and Blas Garrido  »View Author Affiliations


Optics Letters, Vol. 36, Issue 8, pp. 1344-1346 (2011)
http://dx.doi.org/10.1364/OL.36.001344


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Abstract

We report on the optical properties of active silicon (Si)-rich Si 3 N 4 microdisk cavities in the visible range. We have studied the correlation between the quality (Q) factor of the cavities and the active material deposition parameters. Microphotoluminescence measurements revealed subangstrom whispering galley modes resonances and a maximum Q of 10 4 around 760 nm . These values improve significantly the best results reported so far for Si-based light-emitting circular resonators in the visible range. In contrast to what is reported for Si-rich SiO 2 -based microcavities, we demonstrate the absence of a spectral widening at high pump fluxes associated to carrier absorption mechanisms, which allows high emitted power without degrading the Q of the cavity. These results open the route toward the monolithic integration of those structures into more complex circuits including Si photodetectors.

© 2011 Optical Society of America

OCIS Codes
(230.5750) Optical devices : Resonators
(250.5230) Optoelectronics : Photoluminescence

ToC Category:
Optical Devices

History
Original Manuscript: February 18, 2011
Revised Manuscript: March 4, 2011
Manuscript Accepted: March 4, 2011
Published: April 6, 2011

Citation
Federico Ferrarese Lupi, Daniel Navarro-Urrios, Josep Monserrat, Carlos Dominguez, Paolo Pellegrino, and Blas Garrido, "High Q light-emitting Si-rich Si3N4 microdisks," Opt. Lett. 36, 1344-1346 (2011)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-36-8-1344


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References

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