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Optics Letters

Optics Letters


  • Vol. 36, Iss. 9 — May. 1, 2011
  • pp: 1644–1646

Operation of a Raman laser in bulk silicon

Hanjo Rhee, Oliver Lux, Stefan Meister, Ulrike Woggon, Alexander A. Kaminskii, and Hans Joachim Eichler  »View Author Affiliations

Optics Letters, Vol. 36, Issue 9, pp. 1644-1646 (2011)

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A Raman laser based on a bulk silicon single crystal with 1.127 μm emission wavelength is demonstrated. The Si crystal with 30 mm length was placed into an external cavity and pumped by a Q-switched Nd:YAG master oscillator power amplifier system. Strong defocusing of the pump and Raman laser beam by free carriers was compensated by an intracavity lens. Raman laser operation with a pulse duration of 2.5 ns was identified by a Raman laser threshold significantly lower than the single-pass stimulated Raman-scattering threshold. Linear absorption losses of the 1.06415 μm pump radiation are strongly reduced by cooling the Si crystal to a temperature of 10 K .

© 2011 Optical Society of America

OCIS Codes
(140.3550) Lasers and laser optics : Lasers, Raman
(160.6000) Materials : Semiconductor materials
(290.5910) Scattering : Scattering, stimulated Raman
(230.7405) Optical devices : Wavelength conversion devices

ToC Category:
Lasers and Laser Optics

Original Manuscript: January 20, 2011
Revised Manuscript: March 21, 2011
Manuscript Accepted: March 24, 2011
Published: April 28, 2011

Hanjo Rhee, Oliver Lux, Stefan Meister, Ulrike Woggon, Alexander A. Kaminskii, and Hans Joachim Eichler, "Operation of a Raman laser in bulk silicon," Opt. Lett. 36, 1644-1646 (2011)

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