In this study, we report our new finding of bipolar resistance effect (BRE) in quantum dots (QDs)-embedded structure of Zn/CdSe/Si. This effect features a remarkable linear resistance change and an enhanced BRE when a laser moves along the surface of the structure. The results show that the combination of BRE with QDs is useful for applications and may add a new functionality to QDs-based optoelectronic devices.
© 2012 Optical Society of America
Original Manuscript: February 6, 2012
Revised Manuscript: February 29, 2012
Manuscript Accepted: March 3, 2012
Published: May 17, 2012
Shuai Liu, Ping Cheng, and Hui Wang, "Bipolar resistance effect observed in CdSe quantum-dots dominated structure of Zn/CdSe/Si," Opt. Lett. 37, 1814-1816 (2012)