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Bipolar resistance effect observed in CdSe quantum-dots dominated structure of Zn/CdSe/Si |
Optics Letters, Vol. 37, Issue 11, pp. 1814-1816 (2012)
http://dx.doi.org/10.1364/OL.37.001814
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Abstract
In this study, we report our new finding of bipolar resistance effect (BRE) in quantum dots (QDs)-embedded structure of Zn/CdSe/Si. This effect features a remarkable linear resistance change and an enhanced BRE when a laser moves along the surface of the structure. The results show that the combination of BRE with QDs is useful for applications and may add a new functionality to QDs-based optoelectronic devices.
© 2012 Optical Society of America
OCIS Codes
(040.5160) Detectors : Photodetectors
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
(310.6845) Thin films : Thin film devices and applications
ToC Category:
Optoelectronics
History
Original Manuscript: February 6, 2012
Revised Manuscript: February 29, 2012
Manuscript Accepted: March 3, 2012
Published: May 17, 2012
Citation
Shuai Liu, Ping Cheng, and Hui Wang, "Bipolar resistance effect observed in CdSe quantum-dots dominated structure of Zn/CdSe/Si," Opt. Lett. 37, 1814-1816 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-11-1814
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