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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 37, Iss. 12 — Jun. 15, 2012
  • pp: 2235–2237

Ultrahigh-sensitivity infrared detection system using an InGaAs p-i-n photodiode with low dielectric polarization noise

Makoto Akiba and Yoshikazu Kanai  »View Author Affiliations

Optics Letters, Vol. 37, Issue 12, pp. 2235-2237 (2012)

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We developed a highly sensitive infrared photodetection system using an InGaAs p-i-n photodiode. The temperature and data sampling rate dependences of the readout noise were measured to determine the optimum temperature for low-noise detection. The optimum temperature for sampling rates below 100 Hz was 100 K, and the readout noise at 1 Hz was 2.5 e. The readout noise at 1 MHz and 140 K was 49.4 e. The light detection limit of the system was 8.2×1019W at a wavelength of 1.3 μm. The spectral noise densities of a readout circuit were measured in order to determine the origin of noise.

© 2012 Optical Society of America

OCIS Codes
(040.0040) Detectors : Detectors
(040.3060) Detectors : Infrared
(040.3780) Detectors : Low light level
(040.5160) Detectors : Photodetectors
(040.5350) Detectors : Photovoltaic

ToC Category:

Original Manuscript: March 1, 2012
Revised Manuscript: April 17, 2012
Manuscript Accepted: April 17, 2012
Published: June 6, 2012

Makoto Akiba and Yoshikazu Kanai, "Ultrahigh-sensitivity infrared detection system using an InGaAs p-i-n photodiode with low dielectric polarization noise," Opt. Lett. 37, 2235-2237 (2012)

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