Abstract
We report silicon waveguide butt-coupled p-i-n InGaAs photodetectors epitaxially grown on silicon-on-insulator substrates by metalorganic chemical vapor deposition. The InGaAs absorption layer that is lattice-matched to InP is selectively grown on patterned SOI substrates, employing metamorphic growth of GaAs and InP buffer layers. We measure a dark current of 2.5 μA and a responsivity of at 1550 nm wavelength upon bias voltage, with a InGaAs photodetector area. This device exhibits a 3 dB bandwidth of 9 GHz upon bias voltage. We demonstrate an open-eye diagram at data rate upon bias voltage.
© 2012 Optical Society of America
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