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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 37, Iss. 22 — Nov. 15, 2012
  • pp: 4681–4683

Using carrier-depletion silicon modulators for optical power monitoring

Hui Yu, Dietmar Korn, Marianna Pantouvaki, Joris Van Campenhout, Katarzyna Komorowska, Peter Verheyen, Guy Lepage, Philippe Absil, David Hillerkuss, Luca Alloatti, Juerg Leuthold, Roel Baets, and Wim Bogaerts  »View Author Affiliations


Optics Letters, Vol. 37, Issue 22, pp. 4681-4683 (2012)
http://dx.doi.org/10.1364/OL.37.004681


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Abstract

Defect-mediated subbandgap absorption is observed in ion-implanted silicon-on-oxide waveguides that experience a rapid thermal annealing at 1075°C. With this effect, general carrier-depletion silicon modulators exhibit the capability of optical power monitoring. Responsivity is measured to be 22mA/W for a 3 mm long Mach–Zehnder modulator of 2×1018cm3 doping concentration at 7.1V bias voltage and 5.9mA/W for a ring modulator of 1×1018cm3 doping concentration at 10V bias voltage. The former is used to demonstrate data detection of up to 35Gbits/s.

© 2012 Optical Society of America

OCIS Codes
(230.7020) Optical devices : Traveling-wave devices
(250.7360) Optoelectronics : Waveguide modulators
(250.0040) Optoelectronics : Detectors

ToC Category:
Optoelectronics

History
Original Manuscript: September 5, 2012
Manuscript Accepted: September 25, 2012
Published: November 9, 2012

Citation
Hui Yu, Dietmar Korn, Marianna Pantouvaki, Joris Van Campenhout, Katarzyna Komorowska, Peter Verheyen, Guy Lepage, Philippe Absil, David Hillerkuss, Luca Alloatti, Juerg Leuthold, Roel Baets, and Wim Bogaerts, "Using carrier-depletion silicon modulators for optical power monitoring," Opt. Lett. 37, 4681-4683 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-22-4681


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