We propose a photodetector (PD) based on the internal photoemission effect over a Schottky barrier on a CMOS-compatible Si microring resonator for 1.55 μm. To analyze the device, we model the microring waveguide partially covered by a metal/silicide nanolayer, using the Z-transform method. The proposed structure benefits from the resonant-cavity-enhanced (RCE) waveguide PDs enjoying high efficiency and wavelength selectivity. Simulations show that the maximum value of the bandwidth-efficiency product for the proposed structure is in the order of 10 GHz, which is much higher than those reported for other RCE-based PDs.
© 2012 Optical Society of America
Original Manuscript: September 24, 2012
Revised Manuscript: October 26, 2012
Manuscript Accepted: November 5, 2012
Published: November 28, 2012
Aref Rasoulzadeh Zali, Mohammad Kazem Moravvej-Farshi, and Gholamreza Abaeiani, "Internal photoemission-based photodetector on Si microring resonator," Opt. Lett. 37, 4925-4927 (2012)