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High power (130 mW) 40 GHz 1.55 μm mode-locked distributed Bragg reflector lasers with integrated optical amplifiers |
Optics Letters, Vol. 37, Issue 3, pp. 344-346 (2012)
http://dx.doi.org/10.1364/OL.37.000344
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Abstract
High output power 40 GHz 1.55 μm passively mode-locked surface-etched distributed Bragg reflector (DBR) lasers with monolithically integrated semiconductor optical amplifiers are reported. These are based on an optimized AlGaInAs/InP epitaxial structure with a three quantum well active layer and an optical trap layer. The device produces near transform limited Gaussian pulses with a pulse duration of 3.3 ps. An average output power during mode-locked operation of 130 mW was achieved with a corresponding peak power of
© 2012 Optical Society of America
OCIS Codes
(130.3120) Integrated optics : Integrated optics devices
(130.5990) Integrated optics : Semiconductors
(140.3280) Lasers and laser optics : Laser amplifiers
(140.7090) Lasers and laser optics : Ultrafast lasers
(220.4000) Optical design and fabrication : Microstructure fabrication
(230.5590) Optical devices : Quantum-well, -wire and -dot devices
ToC Category:
Integrated Optics
History
Original Manuscript: October 7, 2011
Revised Manuscript: November 29, 2011
Manuscript Accepted: December 2, 2011
Published: January 20, 2012
Citation
Jehan Akbar, Lianping Hou, Mohsin Haji, Michael J. Strain, John H. Marsh, A. Catrina Bryce, and Anthony E. Kelly, "High power (130 mW) 40 GHz 1.55 μm mode-locked distributed Bragg reflector lasers with integrated optical amplifiers," Opt. Lett. 37, 344-346 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-3-344
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