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Graphene on SiC as a Q-switcher for a 2 μm laser |
Optics Letters, Vol. 37, Issue 3, pp. 395-397 (2012)
http://dx.doi.org/10.1364/OL.37.000395
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Abstract
Double-layer graphene epitaxially grown on silicon carbide was used to Q-switch a Tm:YAG laser. Stable Q-switched laser pulses at the central wavelength of 2.01 μm were obtained. The maximum average output power, pulse repetition rate, and single pulse energy were 38 mW, 27.9 kHz, and 1.74 μJ, respectively. Our results illustrate that graphene can be used as a saturable absorber at the 2 μm region.
© 2012 Optical Society of America
OCIS Codes
(140.3460) Lasers and laser optics : Lasers
(140.3540) Lasers and laser optics : Lasers, Q-switched
(160.4330) Materials : Nonlinear optical materials
(140.3538) Lasers and laser optics : Lasers, pulsed
(160.4236) Materials : Nanomaterials
ToC Category:
Lasers and Laser Optics
History
Original Manuscript: September 14, 2011
Revised Manuscript: November 30, 2011
Manuscript Accepted: December 8, 2011
Published: January 30, 2012
Virtual Issues
Vol. 7, Iss. 4 Virtual Journal for Biomedical Optics
Citation
Qing Wang, Hao Teng, Yuwan Zou, Zhiguo Zhang, Dehua Li, Ran Wang, Chunqing Gao, Jingjing Lin, Liwei Guo, and Zhiyi Wei, "Graphene on SiC as a Q-switcher for a 2 μm laser," Opt. Lett. 37, 395-397 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-3-395
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