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Optics Letters

| RAPID, SHORT PUBLICATIONS ON THE LATEST IN OPTICAL DISCOVERIES

  • Editor: Alan E. Willner
  • Vol. 37, Iss. 4 — Feb. 15, 2012
  • pp: 611–613

Analysis of diffuse reflectivity of a highly disordered GaN nanostructure as an antireflection coating

Hyunkyu Park and Chinkyo Kim  »View Author Affiliations


Optics Letters, Vol. 37, Issue 4, pp. 611-613 (2012)
http://dx.doi.org/10.1364/OL.37.000611


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Abstract

A highly disordered GaN nanostructure was grown by using hydride vapor phase epitaxy on an Si(100) substrate, and its diffuse reflectivity was measured in the 200–1200 nm spectral range by using an integrating sphere. A modified multiple-scattering-based model successfully explained the spectral distribution of diffuse reflectivity of this highly disordered GaN nanostructure.

© 2012 Optical Society of America

OCIS Codes
(310.1210) Thin films : Antireflection coatings
(310.6860) Thin films : Thin films, optical properties
(160.4236) Materials : Nanomaterials

ToC Category:
Thin Films

History
Original Manuscript: November 16, 2011
Manuscript Accepted: January 4, 2012
Published: February 9, 2012

Citation
Hyunkyu Park and Chinkyo Kim, "Analysis of diffuse reflectivity of a highly disordered GaN nanostructure as an antireflection coating," Opt. Lett. 37, 611-613 (2012)
http://www.opticsinfobase.org/ol/abstract.cfm?URI=ol-37-4-611


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