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Optics Letters

Optics Letters


  • Editor: Alan E. Willner
  • Vol. 37, Iss. 5 — Mar. 1, 2012
  • pp: 788–790

Broadband terahertz pulse emission from ZnGeP2

J. D. Rowley, J. K. Pierce, A. T. Brant, L. E. Halliburton, N. C. Giles, P. G. Schunemann, and A. D. Bristow  »View Author Affiliations

Optics Letters, Vol. 37, Issue 5, pp. 788-790 (2012)

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Optical rectification is demonstrated in (110)-cut ZnGeP2 (ZGP) providing broadband terahertz (THz) generation. The source is compared to both GaP and GaAs over a wavelength range of 1150 nm to 1600 nm and peak-intensity range of 0.5GW/cm2 to 40GW/cm2. ZGP peak-to-peak field amplitude is larger than in the other materials due to either lower nonlinear absorption or larger second-order nonlinearity. This material is well suited for broadband THz generation across a wide range of infrared excitation wavelengths.

© 2012 Optical Society of America

OCIS Codes
(130.5990) Integrated optics : Semiconductors
(190.7110) Nonlinear optics : Ultrafast nonlinear optics
(040.2235) Detectors : Far infrared or terahertz

ToC Category:
Ultrafast Optics

Original Manuscript: November 10, 2011
Revised Manuscript: December 15, 2011
Manuscript Accepted: December 26, 2011
Published: February 21, 2012

J. D. Rowley, J. K. Pierce, A. T. Brant, L. E. Halliburton, N. C. Giles, P. G. Schunemann, and A. D. Bristow, "Broadband terahertz pulse emission from ZnGeP2," Opt. Lett. 37, 788-790 (2012)

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